A colleague who is not at all timid about diving into the deep end of the technology pool forwarded me this little gem this morning with the note: “This has got to be the geekiest press release I’ve ever seen. …”
San Francisco, CA. -Dec. 12, 2006- At the International Electron Device Meeting (IEDM) today, IBM (NYSE: IBM) and AMD (NYSE: AMD) presented papers describing the use of immersion lithography, ultra-low-K interconnect dielectrics, and multiple enhanced transistor strain techniques for application to the 45nm microprocessor process generation. AMD and IBM expect the first 45nm products using immersion lithography and ultra-low-K interconnect dielectrics to be available in mid-2008.
I’m not sure I can wait that long.
